Michigan Technological University
is pleased to announce
a Colloquium
with
MTU Materials Science and Engineering
and Physics Department
A REVIEW OF STRAIN
RELAXATION OBSERVED IN
WAFER-BONDED HETEROSTRUCTURES
There has been a large amount of research over the last several years in the
area of how growth on a wafer-bonded heterostructure, or compliant substrate,
impacts the relaxation of mismatched semiconductor films. Experimental
investigations by different groups have come to different conclusions about the
degree to which and the mechanism by which film relaxation is impacted. This
talk first reviews the existing data for substrate compliance in the framework
of the type of bonded interface, the geometry of the bonded structure, and the
degree of mismatch between the film and the wafer-bonded substrate. The
different mechanisms that have been proposed to account for the observed
relaxation are then articulated. The degree to which the experimental data from
a given type of bonded substrate supports one mechanism over another is
discussed in terms of the substrate geometry, degree of mismatch, and the
bonded interface.
Thursday, December 13, 2001
Fisher Hall, Room 139, 4:00
p.m.