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Research |
Yap Group Achieves First Successful Growth of Boron Nitride Nanotubes on Substrates at Low Temperatures
November 30, 2005
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Graduate student Jiesheng Wang and colleagues have published a paper on a new growth technique for boron nitride nanotubes (BNNTs) in Nano Letters. This paper is now available online as an As Soon As Possible (ASAP) article. High growth temperatures (>1100 °C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 °C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV. Wang is part of the Yap Research Group in the Physics Department at Michigan Tech.
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