Array of four dislocations selectively etched on a {111} Si substrate,
AFM image (Nanoscope Dimension 3000 SPM, Digital Instruments, Santa Barbara,
CA). The dislocations were introduced into a dislocation-free 0.4-mm substrate
by local deformation and bending at about 900 K and revealed by etching.
Courtesy of Edward M. Nadgorny.
